铁电性
材料科学
光电子学
晶体管
场效应晶体管
非易失性存储器
氮化物
极化(电化学)
纳米技术
电气工程
电介质
图层(电子)
化学
工程类
电压
物理化学
作者
Shubham Mondal,Ding Wang,Mingtao Hu,Jiangnan Liu,Minming He,Ping Wang,Zetian Mi
标识
DOI:10.1109/ted.2023.3295792
摘要
In this article, we demonstrate ferroelectric field-effect transistors (FeFETs) in a back-gate configuration by harnessing the polarization switching characteristics of epitaxially grown ferroelectric scandium aluminum nitride (ScAlN) to control the conductance of an indium-tin oxide (ITO) channel. The ferroelectric transistors show a large memory window of ~0.42 V/nm. A high ON current along with a large ON/OFF current ratio of ~106 is observed owing to ferroelectric polarization-induced carrier modulation in the ITO channel. The distinct ON/OFF states and the memory window were preserved after 105 cycles while simultaneously showing retention time >105 s. The integration of a nitride ferroelectric (ScAlN) with a promising channel material (ITO) as demonstrated in this work provides a unique opportunity to realize high-performance FeFETs for in-memory computing and edge intelligent applications.
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