斜面
浅沟隔离
薄脆饼
材料科学
抵抗
蚀刻(微加工)
光电子学
基质(水族馆)
过程(计算)
沟槽
沉积(地质)
纳米技术
图层(电子)
结构工程
计算机科学
工程类
古生物学
海洋学
沉积物
地质学
操作系统
生物
作者
V. Dureuil,Jean-Luc Baltzinger,K. Tastets,L. Vallier,N. Wlodarczyk,O. Bernaud,J. Leroueille,C. Mouroux
出处
期刊:Advanced Semiconductor Manufacturing Conference
日期:2010-07-01
卷期号:: 213-216
被引量:1
标识
DOI:10.1109/asmc.2010.5551455
摘要
The defect density reduction is one of the main challenges to increase the yield. This article presents a mechanism of defect formation specific to the STI module. This defect-flake like - appears during HDP-CVD process deposition. It comes from oxide bubbles localised at the bevel of the substrate. The suppression of this defect consists into the bevel shape optimization. Moreover, process improvement as resist strip post etch contributes to clean the bevel from polymer and reduces strongly the flakes density.
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