Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes (Advanced Optical Materials 10/2023)

In article number 2203001, Viktor V. Brus and co-workers report on the advanced radiation resistance of high-performance self-powered UV–Vis–NIR (300–800 nm) multi-component hybrid perovskite photodiodes. The devices were exposed to a short impulse of 170 keV proton irradiation with a fluence of up to 1013 protons cm−2. Even heavily proton-irradiated perovskite photodiodes retain 75% of their initial photoelectric characteristics: external quantum efficiency of ≥80%, spectral responsivity of 0.46 A/W, and maximum detectivity of 2 × 1012 Jones.