A state-of-art review on gallium oxide field-effect transistors

材料科学 光电子学 晶体管 场效应晶体管 功勋 异质结 MOSFET 兴奋剂 氮化镓 纳米技术 工程物理 电气工程 物理 工程类 图层(电子) 电压
作者
Rundi Qiao,Hongpeng Zhang,Shuting Zhao,Lei Yuan,Renxu Jia,Bo Peng,Yuming Zhang
出处
期刊:Journal of Physics D [IOP Publishing]
卷期号:55 (38): 383003-383003 被引量:20
标识
DOI:10.1088/1361-6463/ac7c44
摘要

Abstract As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3 ) has recently aroused increasing attention in the area for high-power electronics, power switch for radio frequency (RF) operation, and solar blind UV detectors. The β -phase of Ga 2 O 3 is deemed as a potential candidate for next generation high-power electronics due to its high theoretical breakdown electric field (8 MV cm −1 ), UWBG (4.8 eV), and large Baliga’s figure of merit. Owing to the intensive research efforts across the world since 2013, gallium oxide transistors recently make rapid advances in device design and performance. Until now, high quality large-size bulk Ga 2 O 3 and n-type epi products are successively coming onto the market, as well as there are gratifying progress worldwide to develop more complex epi structures, including β -(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 , β -(In x Ga 1− x ) 2 O 3 /Ga 2 O 3 , n-Ga 2 O 3 /p-NiO, β -Ga 2 O 3 /4H-SiC heterostructures et al . In this paper, the basic physical properties of Ga 2 O 3 , and the recent research process of Ga 2 O 3 based transistors field-effect transistor (FET) for high-power electronics and RF are introduced. Furthermore, various state-of-the-art structures and process used in Ga 2 O 3 based FETs have been summarized and compared, including planar/vertical metal-oxide-semiconductor field-effect transistor (MOSFET), trench MOSFET, FinFET, modulation-doped FET or called it high electron mobility transistors with two-dimensional electron gas channel, SOI MOSFET, thus the potential of Ga 2 O 3 FETs is preliminary revealed. Finally, the prospect of the Ga 2 O 3 based FET for high-power and RF application will be also analyzed.
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