铌
催化作用
兴奋剂
单层
盐(化学)
无机化学
材料科学
氧化铌
化学工程
化学
核化学
纳米技术
冶金
物理化学
有机化学
光电子学
工程类
作者
Neileth Stand,A.N. Barbosa,Pamela Lais da Silva Oliveira,Cesar D. Mendoza,F.L. Freire
标识
DOI:10.1016/j.apsusc.2024.159816
摘要
The in situ doping of tungsten disulfide (WS2) monolayers with Niobium (Nb) atoms was obtained through the atmospheric pressure chemical vapor deposition (APCVD) method by controlling the Nb2O5 and WO3 precursors mass ratios. Samples were prepared employing the same growth parameters with and without the use of KBr salt as a catalyst. In both cases, the Nb incorporation quenches the luminescence intensity of the doped samples, and it depends on the Nb2O5:WO3 mass ratio. X-ray photoelectron spectroscopy (XPS) measurements were performed, and the observed redshift at the Fermi level indicated p-type doping. Nb-doped WS2 monolayers synthesized without the use of the catalyst have lower defect density, as revealed by a careful Raman analysis, and are free of agglomerates on their monolayers’ basal plane. The use of KBr as the catalyst increases the average crystal size but also increases the disorder effects compared with samples prepared without the use of salt. The presence of agglomerates of impurities at the surface of doped samples was observed in samples prepared with the use of salt as a catalyst. The controlled synthesis of p-type WS2 with low defect density is essential for developing electronic and photonic devices based on WS2 material.
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