High-Speed Laser Cutting Silicon-Glass Double Layer Wafer with Laser-Induced Thermal-Crack Propagation

This paper studied laser induced thermal-crack propagation (LITP) dicing of a glass-silicon double-layer wafer with high scanning speed. A defocusing continuous laser was used in the experimental system as the volumetric heat source for the glass layer and the surface heat source for the silicon layer. Based on the principle of thermal-crack propagation, the commercial software ABAQUS was used on the simulated analysis, and the results of temperature field and thermal stress field distribution with high and low speed were compared. The experiment was executed in accordance with the simulation parameters. The surface morphology of the cut section was described by optical microscopy and a profilometer, and combined with the results, the non-synchronous propagation process of the crack under high speed scanning was revealed. Most importantly, the scanning section with a nanoscale surface roughness was obtained. The surface roughness of the silicon layer was 19 nm, and that of glass layer was 9 nm.