发光二极管
可见光通信
带宽(计算)
多路复用
光电子学
物理
材料科学
光学
计算机科学
电信
作者
Feifan Xu,Zuxin Jin,Tao Tao,Pengfei Tian,Guobin Wang,Xiaoyan Liu,Ting Zhi,Qiang Yan,Danfeng Pan,Zili Xie,Ke Xu,Bin Liu,Rong Zhang
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2022-04-18
卷期号:43 (6): 910-913
被引量:28
标识
DOI:10.1109/led.2022.3168314
摘要
A high-speed c-plane InGaN/GaN blue micro-scale light-emitting diodes (Micro-LEDs) with a pixel diameter of $60~\mu \text{m}$ , and a high −3 dB modulation bandwidth of 1.53 GHz at the current density of 5996 A/cm 2 were demonstrated. The ultra-thin quantum well (QW) structure with InGaN layer of 1 nm was designed, and optimized variable temperature growth processes were adopted to increase In incorporation and localization effect in the quantum wells, which greatly reduce the polarization field and increase the overlap of electron-hole wave functions. The differential carrier lifetime was effectively shortened, increasing the modulation bandwidth of the Micro-LED. And a data rate of 5.27 Gbps with a bit error rate (BER) of $3.1\times 10^{-{3}}$ was demonstrated with orthogonal frequency-division multiplexing (OFDM) signal for a 1 m free space real-time visible light communication (VLC) based on such high-speed micro-LED. Promising results in this work may support a great development of high-speed VLC applications.
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