Optoelectronic properties of nanostructured Sb2Se3 films synthesized by electrodeposition method: Effect of Zn concentrations

In this research, the effect of different concentrations of Zn doping on antimony selenide (Sb2Se3) nanostructured films is investigated using electrodeposition method to study the properties of optoelectronics. XRD patterns confirmed the formation of polycrystalline orthorhombic Sb2Se3 films and FESEM images confirmed the formation of spherical particles at the nanoscale. Studying optical properties showed the band gap energy of less than 2.00 eV and investigating the electrical properties represented an increase in the density of electrical carriers in the films of Sb2Se3 with adding Zn concentrations. Photodetector parameters were calculated by photocurrent characterization and with alternating xenon light (on and off). It was found that sensitivity from 316.66 % to 4017.64 %, gain from 218.36 to 3924.30, responsivity from 0.0095 to 0.1708 mA/W, and specific detectivity from 1.02 × 10+9 to 1.54 × 10+9 Jones of the undoped sample reached its maximum possible value with increasing doping in the sample with maximum Zn concentration.