A novel low‐temperature sintering microwave dielectric based on forsterite (Mg 2 SiO 4 ) ceramics was synthesized through the solid‐state reaction method. The effects of LiF additions on the sinterability, phase composition, microstructure, and microwave dielectric properties of Mg 2 SiO 4 were investigated. It demonstrated that LiF could significantly broaden the processing window (~300°C) for Mg 2 SiO 4 , and more importantly the sintering temperature could be lowered below 900°C, maintaining excellent microwave dielectric properties simultaneously. The 2 wt% LiF‐doped samples could be well‐sintered at 800°C and possessed a ε r ~ 6.81, a high Q×f ~ 167 000 GH z, and a τ f ~ −47.9 ppm/°C, having a very good potential for LTCC integration applications.