静电力显微镜
曲率
半导体
曲率半径
导电原子力显微镜
曲面(拓扑)
开尔文探针力显微镜
电场
材料科学
半径
静电学
导电体
工作职能
表面力
光学
机械
原子力显微镜
纳米技术
光电子学
化学
物理
几何学
复合材料
平均曲率
数学
计算机安全
流量平均曲率
量子力学
物理化学
图层(电子)
计算机科学
作者
Sylvain Hudlet,M. Jean,B. Roulet,Jean-Philippe Berger,C. Guthmann
摘要
Atomic force microscopy used in the resonant mode is a powerful tool for measuring local surface properties: for example, the quantitative analysis of the electrical forces induced by the application of an electric field between a conductive microscope tip and a surface allows the determination of the tip/surface capacitance and the local surface work function. However, these quantitative analyses require knowledge of tip geometry. In this article, we show that the simple procedure of evaluating the tip curvature radius by fitting the variations of the electrostatic force with the tip-surface distance is not always adapted to the case where one of the tip-surface system elements is a semiconductor. However, particular experimental conditions are determined to overcome these difficulties.
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