Bipolar resistive switching characteristics of samarium oxide solid electrolyte thin films for non-volatile memory applications

In this paper, we report the bipolar resistive switching behaviors in Ag/Sm 2 O 3 /Pt structures where the Sm 2 O 3 thin films act as solid electrolyte layer of electrochemical metallization memory (ECM) devices. The memory devices show reproducible and stable bipolar resistive switching over 1000 cycles with a resistance ratio (high-resistance state to low-resistance state) of over 4 orders of magnitude and stable retention for over 10 4 [Formula: see text]s at room temperature. Moreover, the benefits of high yield and multilevel storage possibility make the device promising in the next generation non-volatile memory application.