材料科学
抑制性突触后电位
石墨烯
神经形态工程学
兴奋性突触后电位
晶体管
门控
光电子学
控制重构
突触
纳米技术
计算机科学
神经科学
电气工程
人工神经网络
人工智能
嵌入式系统
工程类
生物
电压
作者
Yao Yao,Xinnan Huang,Songang Peng,Dayong Zhang,Jingyuan Shi,Guanghui Yu,Qi Liu,Zhi Jin
标识
DOI:10.1002/aelm.201800887
摘要
Abstract Reconfigurable artificial synapse with synaptic responses modulated between excitatory and inhibitory modes is critical for building artificial intelligence systems. However, it is still a challenge to realize such reconfigurability with a simple single‐gated transistor. Here, hydrogen‐rich silicon nitride film is employed as the gate dielectric to construct a single‐gate controlled graphene‐based artificial synapse to realize the reconfigurable synaptic responses. In this dielectric, both traps and movable hydrogen ions are introduced to induce the carrier trapping effect and the capacitive gating effect, respectively. Comparatively, the capacitive gating effect needs stronger electrical fields excitation and can significantly modulate the graphene channel in a longer time. Utilizing the carrier trapping effect and the ambipolar property of graphene, the fundamental potentiation and depression behaviors can be emulated in each response mode. Then, utilizing the capacitive gating effect, the reconfiguration between excitatory and inhibitory response modes can be achieved. All synaptic responses only depend on the signals inputted through the back‐gate electrode, which is distinctively different from previous dynamic devices with additional modulating terminals. Such reconfiguration feature provides the artificial synapse the ability to emulate some complicated biological behaviors in future artificial intelligence systems, such as the adjustable perception of different external stimuli under different conditions.
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