光电探测器
红外线的
范德瓦尔斯力
光电子学
材料科学
光电效应
光学
物理
量子力学
分子
作者
Haoyun Wang,Zexin Li,Dongyan Li,Ping Chen,Lejing Pi,Xing Zhou,Tianyou Zhai
标识
DOI:10.1002/adfm.202103106
摘要
Abstract Infrared photodetectors have been widely applied in various fields, including thermal imaging, biomedical imaging, and communication. Van der Waals (vdW) integration based on 2D materials provides a new solution for high‐performance infrared photodetectors due to the versatile device configurations and excellent photoelectric properties. In recent years, great progress has been made in infrared photodetectors based on vdW integration. In this review, recent progress in vdW integration‐based infrared photodetectors is presented. First, the working mechanisms and advantages of photodetectors with different structures and band alignments are presented. Then, the recent progress of vdW integration‐based infrared photodetectors is reviewed, focusing on 2D/ n D ( n = 0, 1, 2, 3) vdW integration, and the band engineering as well as the performance of the photodetectors are discussed in detail. Finally, a summary is delivered, and the challenges and future directions of vdW integration‐based infrared photodetectors are provided.
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