带隙
折射率
掺杂剂
振荡器强度
直接和间接带隙
兴奋剂
价(化学)
铟
半金属
密度泛函理论
态密度
材料科学
氧化物
化学
电介质
凝聚态物理
分析化学(期刊)
谱线
计算化学
光电子学
物理
有机化学
冶金
色谱法
天文
作者
H. A. Rahnamaye Aliabad,Sayed Mohsen Hosseini,A. Kompany,A. Youssefi,Ebrahim Attaran Kakhki
标识
DOI:10.1002/pssb.200844359
摘要
Abstract The band structure, the dielectric function, the reflectivity, the refractive index and the oscillator strength sum rule were calculated for pure In 2 O 3 and alloyed In 1.5 T 0.5 O 3 (where T represents Sc, Y, La and Ac) using density functional theory (DFT). The full potential linearized augmented plane wave (FP‐LAPW) method was used with the local density approximation (LDA + U ). Calculations of the optical spectra were performed for the energy range 0–30 eV. The calculated results indicate that the upper valance bands of In 2 O 3 show a small dispersion and the value of the band gap increases for Sc and Y dopants and decreases for Ac and La dopants. The calculations indicate that there are two band gaps for In 2 O 3 . The first shows a strong optical absorption, as a direct band gap occurs from a 0.81 eV energy level below the top of valence band. The second shows a much weaker absorption from the top of the valence band to the bottom of the conduction band. The refractive index for In 2 O 3 is 1.69 nm at 800 nm, near the visible region. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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