薄膜晶体管
材料科学
图层(电子)
光电子学
无定形固体
铟
溅射
氧气
分析化学(期刊)
薄膜
纳米技术
化学
结晶学
色谱法
有机化学
作者
Yu Tian,Dedong Han,Suoming Zhang,Fuqiang Huang,Dongfang Shan,Yingying Cong,Jian Cai,Liangliang Wang,Shengdong Zhang,Xing Zhang,Yi Wang
标识
DOI:10.7567/jjap.53.04ef07
摘要
In this work, fully transparent dual-layer channel amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are fabricated on glass substrates at low temperature. Dual-layer channel a-IGZO TFTs are studied by changing the partial pressure of oxygen while sputtering IGZO layers for comparison with single-layer channel TFTs which are fabricated with a constant oxygen content. All four types of dual-layer channel TFT sample demonstrate better performance, on-to-off ratios of ∼10 8 and low subthreshold swing (SS) of less than 200 mV/decade, than the single-layer ones. TFTs with two layers, a low-oxygen layer and a high-oxygen layer formed using oxygen partial pressures of 0.01 and 0.05 Pa, respectively demonstrate relatively better performance with a mobility of more than 60 cm 2 V −1 s −1 . Among them, the TFTs with a channel layer thickness ratio of 3 : 1 show the best transfer characteristics with a high on-to-off current ratio ( I on/off ) of 1.8 × 10 8 and a low SS of 135 mV/decade.
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