接受者
抗磁性
兴奋剂
硅
材料科学
顺磁性
光电子学
浅层供体
硼
重组
电子顺磁共振
分析化学(期刊)
载流子寿命
核磁共振
凝聚态物理
化学
磁场
物理
有机化学
基因
量子力学
生物化学
色谱法
作者
Abigail R. Meyer,Tarek O. Abdul Fattah,P. C. Taylor,Michael B. Venuti,Serena Eley,Vincenzo LaSalvia,William Nemeth,Matthew Page,David L. Young,Matthew P. Halsall,Paul Stradins,Sumit Agarwal
出处
期刊:ACS applied energy materials
[American Chemical Society]
日期:2022-11-07
卷期号:5 (11): 13161-13165
被引量:2
标识
DOI:10.1021/acsaem.2c02852
摘要
The minority carrier lifetime in B-doped Czochralski (Cz) Si declines upon carrier injection due to light-induced degradation (LID), which is attributed to the formation of a recombination-active boron–oxygen complex. Ga-doped Cz Si does not undergo LID. Previously, we showed that B-doped Cz Si undergoes a transition from paramagnetic to diamagnetic due to LID. Herein, we show that Ga-doped Cz Si remains paramagnetic upon carrier injection. This suggests that either the shallow hole traps that are formed in B-doped Cz Si are absent in Ga-doped Cz Si, or the negative-U centers in Ga-doped Cz Si do not transform into a recombination-active configuration, because the shallow acceptor trap state is shallower than the Ga acceptor level in the forbidden gap. In contrast to B-doped Cz Si, the defect signatures in Ga-doped Cz Si do not change upon light exposure, as detected by both electron paramagnetic resonance and deep-level transient spectroscopy.
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