Hole-Selective SiNx and AlOx Tunnel Nanolayers for Improved Polysilicon Passivating Contacts

A highly efficient hole-selective passivating contact remains the crucial step required to increase the efficiency of polysilicon-based Si solar cells. The future development of solar modules depends on a device structure that can complement the electron-selective tunnel oxide passivating contact with an equivalent hole-selective contact. We investigate plasma enhanced chemical vapor deposited (PECVD) SiN