制作
纳米技术
材料科学
晶体管
数码产品
电介质
钥匙(锁)
场效应晶体管
工程物理
计算机科学
光电子学
电气工程
物理
工程类
电压
医学
替代医学
计算机安全
病理
出处
期刊:Matter
[Elsevier]
日期:2023-08-01
卷期号:6 (8): 2496-2498
标识
DOI:10.1016/j.matt.2023.05.004
摘要
Atomically thin two-dimensional (2D) materials enable advancing Moore's Law, yet creating these remains challenging in terms of material synthesis and architecture fabrication. In the issue of Nature Materials and Nature, Peng and co-workers reported facile methods for the synthesis of single-crystalline high-κ layered dielectrics and the fabrication of 2D fin field-effect transistors (FinFETs). Atomically thin two-dimensional (2D) materials enable advancing Moore's Law, yet creating these remains challenging in terms of material synthesis and architecture fabrication. In the issue of Nature Materials and Nature, Peng and co-workers reported facile methods for the synthesis of single-crystalline high-κ layered dielectrics and the fabrication of 2D fin field-effect transistors (FinFETs).
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