InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5%

Abstract We demonstrate high-performance 10 × 10 μ m 2 InGaN amber micro-size LEDs ( μ LEDs). At 15 A cm −2 , the InGaN μ LEDs show a single emission peak located at 601 nm. The peak external quantum efficiency (EQE) and wall-plug efficiency are 5.5% and 3.2%, respectively. Compared to the 100 × 100 μ m 2 μ LEDs, the 10 × 10 μ m 2 InGaN red μ LEDs maintain a similar EQE value with the same efficiency droop. These results point out that InGaN materials are much more promising for higher efficiency than the common AlInGaP materials for the ultra-small size red μ LEDs required by augmented reality and virtual reality displays.