Development on main chain scission resists for high-NA EUV lithography

In this work, we introduce main chain scission resists with new concept for High-NA's generation and report their lithography performance. Zeon has developed a new resist (ZER02#06M) in order to improve both resolution and lithography performance because conventional Zeon resists generated worse resolution and kissing(C/H), pinching(L/S) defects at tight pitch by top loss. The concreate approaches in order to improve the challenges are that to make scission reaction efficient and to get developability at exposed area higher in changing both monomers and functional groups. Zeon aims to make clear threshold between exposed and un-exposed area and improve low contrast and sensitivity at tight patterns especially. The lithography performance of ZER02#06M with their approaches were able to improve LCDU and margin with low LCDU on litho-performance compared to ZER02#04DM and ZER02#05M. Additionally, Zeon resists are indicated to have long-terms stability during litho-process with delay.