材料科学
制作
涂层
基质(水族馆)
激光器
铝
热导率
焊接性
氮化物
图层(电子)
光电子学
电阻率和电导率
冶金
复合材料
光学
合金
电气工程
病理
工程类
地质学
替代医学
物理
海洋学
医学
作者
Jian Cheng,Zhen Yang,Sheng Jiang,Fengping Li,Dun Liu
标识
DOI:10.1016/j.ceramint.2022.12.035
摘要
Aluminum nitride (AlN) are particularly suitable as integrated circuits (ICs) substrates due to its high thermal conductivity and excellent electricity insulation. However, its poor weldability with metals limits its usage. Recent research on surface metallization of AlN provides possible solutions to tackle this defect. Nevertheless, these solutions show some shortages such as complicated processes or insufficient electrical conductivity. In this paper, we report a method that consists of laser induced surface metallization and laser sintering of silver (Ag) coatings. A nanosecond laser was applied to induce a 10 μm thick aluminum (Al) layer from the AlN substrate. Afterwards, laser sintering of Ag layers was implemented, which could enhance the conductivity and the bonding performance between layers. With optimized laser parameters applied, both the electrical conductivity and the bonding tests demonstrated excellent physical properties. Finally, simulation and EDS analysis illustrated the melting evolution and confirmed a metallurgical combination of Al and Ag, thus enhancing bonding strength. Thanks to the small size of focused laser spot, electrical circuits width could be greatly narrowed if these findings were applied; hence highly dense ICs on AlN substrate become potentially available.
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