拓扑绝缘体
无缝回放
自旋电子学
绝缘体(电)
量子反常霍尔效应
带隙
量子自旋霍尔效应
凝聚态物理
散射
拓扑(电路)
物理
表面状态
量子霍尔效应
电子
量子力学
铁磁性
光电子学
数学
曲面(拓扑)
组合数学
几何学
作者
Amarjyoti Choudhury,T. Maitra
标识
DOI:10.1088/1361-648x/ad5261
摘要
Topological insulator (TIs), a novel quantum state of materials, has a lot of significance in the development of low-power electronic equipments as the conducting edge states display exceptional endurance against back-scattering. The absence of suitable materials with high fabrication feasibility and significant nontrivial bandgap, is now the biggest hurdle in their potential applications in devices. Here, we illustrate using first principles density functional calculations that the quintuplet layers of EuMg
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