Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects

Solar RRLVolume 8, Issue 6 2470061 Cover PictureFree Access Industrial Czochralski n-type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects Tien Le, Corresponding Author Tien Le [email protected] School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this authorYalun Cai, Yalun Cai School of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW, 2052 AustraliaSearch for more papers by this authorZhongshu Yang, Zhongshu Yang School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this authorRan Chen, Ran Chen School of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW, 2052 AustraliaSearch for more papers by this authorDaniel Macdonald, Daniel Macdonald School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this authorAnYao Liu, Corresponding Author AnYao Liu [email protected] orcid.org/0000-0003-4579-5495 School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this author Tien Le, Corresponding Author Tien Le [email protected] School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this authorYalun Cai, Yalun Cai School of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW, 2052 AustraliaSearch for more papers by this authorZhongshu Yang, Zhongshu Yang School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this authorRan Chen, Ran Chen School of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW, 2052 AustraliaSearch for more papers by this authorDaniel Macdonald, Daniel Macdonald School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this authorAnYao Liu, Corresponding Author AnYao Liu [email protected] orcid.org/0000-0003-4579-5495 School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT, 2601 AustraliaSearch for more papers by this author First published: 22 March 2024 https://doi.org/10.1002/solr.202470061AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Silicon Wafers In article number 2300928, Le, Liu, and co-workers assessed the material quality of the current industrially-grown n-type silicon wafers for photovoltaics, re-examined the usefulness of a gettering step for such materials, identified possible bulk limiting defects, and demonstrated a novel approach to detect iron or chromium in n-type silicon. Volume8, Issue6March 20242470061 RelatedInformation