量子点
纳米技术
材料科学
红外线的
环境友好型
胶体
光电子学
光学
物理
工程类
化学工程
生物
生态学
作者
Jingying Luo,Xin Tong,Shuai Yue,Keming Wu,Xin Li,Jing Wang,Binyu Wang,Zhuojian Li,Xinfeng Liu,Zhiming M. Wang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-10-21
标识
DOI:10.1021/acsnano.4c10795
摘要
Colloidal quantum dots (QDs) are emerging as potential candidates for constructing near-infrared (NIR) photodetectors (PDs) and artificial optoelectronic synapses due to solution processability and a tunable bandgap. However, most of the current NIR QDs-optoelectronic devices are still fabricated using QDs with incorporated harmful heavy metals of lead (Pb) and mercury (Hg), showing potential health and environment risks. In this work, we tailored eco-friendly reverse type-I ZnSe/InP QDs by copper (Cu) doping and extended the photoresponse from the visible to NIR region. Transient absorption spectroscopy analysis revealed the presence of Cu dopant states in ZnSe/InP:Cu QDs that facilitated the extraction of photogenerated charge carriers, leading to an enhanced photodetection performance. Specifically, under 400 nm illumination, the Cu-doped ZnSe/InP QDs-based PDs presented a broadband photodetection ranging from ultraviolet (UV) to NIR, with a responsivity of 70.5 A W–1 and detectivity of 2.8 × 1011 Jones, surpassing those of the undoped ZnSe/InP QDs-based PDs (49.4 A W–1 and 1.9 × 1011 Jones, respectively). More importantly, the ZnSe/InP:Cu QDs-PDs demonstrated various synapse-like characteristics of short-term plasticity (STP), long-term plasticity (LTP), and learning-forging-relearning under NIR light illumination, which were further used to construct PD array devices for simulating the artificial visual system that is available in prospective optical neuromorphic applications.
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