钴
循环伏安法
电化学
氢氧化钴
纳米
胺气处理
材料科学
极化(电化学)
炔烃
化学工程
晶体结构
无机化学
电极
纳米技术
化学
催化作用
结晶学
有机化学
复合材料
物理化学
工程类
作者
Yuqi Tong,David Lai,Ya Li,Tao Hang,Ming Li,Yunwen Wu
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2024-08-05
标识
DOI:10.1021/acsaelm.4c00774
摘要
In the field of electronic plating, the addition of additives is the key to achieve cobalt superfilling, while finding and researching suitable additives is a major challenge. In this work, alkyne-PEG4-amine (AP4A) was used as an inhibitor to achieve nanometer scale superfilling of cobalt electrodeposition. The inhibition of AP4A was analyzed by electrochemical methods, including cyclic voltammetry and chronopotentiometry tests. AP4A effectively inhibits the cobalt electrodeposition, adsorbing onto the surface of the electrode and showing an outstanding ability for polarization. Quantum chemical calculations show that the amino group within AP4A may be the main active site for reaction, which possesses capacity for donating electrons. Furthermore, surface morphology and crystalline structure characterizations indicate that, under the effect of AP4A, the cobalt film maintains excellent electrical properties while obtaining better flatness and preferential orientation of the (101) crystal plane. In superfilling of nanometer scale structures with high aspect ratios, AP4A was used and the bottom-up electrodeposition of cobalt was successfully achieved, which demonstrates that AP4A is an effective inhibitor for cobalt superfilling and offers an excellent solution strategy in electrodeposition area.
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