凝聚态物理
材料科学
铁磁性
异质结
自旋电子学
密度泛函理论
态密度
带隙
磁矩
电子结构
电子能带结构
费米能级
作者
Long Lin,Shaofei Li,Xiaolin Cai,Liwei Zhang,Baoji Wang,Qin Wang,Long Lin,Zhanying Zhang,Xiangfu Wang
标识
DOI:10.1016/j.commatsci.2019.109215
摘要
Vertical integration of two-dimensional (2D) materials has recently emerged as an exciting method for the design of electronic and optoelectronic devices. Searching for ferromagnetic (FM) Van der Waals (vdW) heterostructures with high Curie temperature and multiple-band alignments is crucial to develop next-generation spintronic and optoelectronic nanodevices. In this work, first-principles calculations are employed to explore the structural and electronic properties of vertical tellurene/VS2 vdW heterostructure, and the FM vdW heterostructure is found in the tellurene/VS2 heterobilayer with Curie temperature of 150 K and type-III alignment. The ferromagnetic half-metal properties of two dimensional vertical tellurene/VS2 heterostructure provide the possibilities of realizing the high-temperature FM vdW heterostructures in practice.
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