Preparation of dense and high-purity SiC ceramics by pressureless solid-state-sintering

High-purity SiC materials have been used in semiconductor processes due to their excellent properties. However, they are difficult to densify without sintering aids. In this work, dense and high-purity SiC ceramics have been obtained by pressureless solid-state-sintering with ultra-low contents of sintering additives. The amount of residual B, C and O in the high-purity SiC ceramics was less than 0.15 wt%, respectively, and the total content of other impurity elements (such as aluminum, magnesium, calcium, iron, etc.) was less than 0.015 wt%. Finally, the purity of the as-prepared SiC ceramics was more than 99.5 wt%.