石墨烯
反射损耗
材料科学
微波食品加热
氧化物
吸收(声学)
热液循环
光电子学
凝聚态物理
纳米技术
化学工程
复合材料
复合数
物理
量子力学
工程类
冶金
作者
La Agusu,La Ode Ahmad,Alimin,Muhammad Nurdin,Herdianto,S. Mitsudo,Hikomitsu Kikuchi
出处
期刊:IOP conference series
[IOP Publishing]
日期:2018-05-01
卷期号:367: 012002-012002
被引量:13
标识
DOI:10.1088/1757-899x/367/1/012002
摘要
We report a strong absorption of microwave energy at X-band (8 GHz to 12 GHz) by N-doped graphene. Attachment of nitrogen on the layered structure of GO improves the reflection loss of GO slab (2.0 mm, thickness) from –10 dB to –25.0 dB with a sharp bandwidth ∼0.3 GHz. As for the broader bandwidth of about 1.4 GHz, reflection loss is –10.5 dB. This significant absorption may take place by improvement of magnetic property of NG through high magnetic coupling of localized spins induced by a defect on the surface of graphene. N atoms play as the electron trapper, easily influenced by self-magnetic moments and incoming electromagnetic fields to produce electric and/or magnetic losses. Here, urea acts as the reducing agent and N atoms donor for graphene oxide in hydrothermal process at a temperature of 190 °C.
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