凝聚态物理
旋转扭矩传递
垂直的
自旋(空气动力学)
扭矩
隧道磁电阻
各向异性
隧道枢纽
物理
材料科学
磁场
铁磁性
磁化
量子隧道
光学
量子力学
几何学
数学
热力学
作者
Zhaohao Wang,Weisheng Zhao,Erya Deng,Jacques‐Olivier Klein,Claude Chappert
标识
DOI:10.1088/0022-3727/48/6/065001
摘要
We investigate the magnetization switching induced by spin-Hall-assisted spin-transfer torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic tunnel junction (MTJ) and an β-W strip. Magnetization dynamics in free layer of MTJ is simulated by solving numerically a modified Landau–Lifshitz–Gilbert equation. The influences of spin-Hall write current (density, duration and direction) on the STT switching are evaluated. We find that the switching speed of a STT-MTJ can be significantly improved (reduced to <1 ns) by using a sufficiently large spin-Hall write current density (~25 MA cm−2) with an appropriate duration (~0.5 ns). Finally we develop an electrical model of three-terminal MTJ/β-W device with Verilog-A language and perform transient simulation of switching a 4 T/1MTJ/1β-W memory cell with Spectre simulator. Simulation results demonstrate that spin-Hall-assisted STT-MTJ has advantages over conventional STT-MTJ in write speed and energy.
科研通智能强力驱动
Strongly Powered by AbleSci AI