The Concept of “Threshold Voltage” in Organic Field-Effect Transistors

Advanced MaterialsVolume 10, Issue 12 p. 923-927 Communication The Concept of "Threshold Voltage" in Organic Field-Effect Transistors Gilles Horowitz, Gilles HorowitzSearch for more papers by this authorRiadh Hajlaoui, Riadh Hajlaoui Laboratoire des Matériaux Moléculaires, CNRS, 2 rue Henry-Dunant, F-94320 Thiais (France)Search for more papers by this authorHabib Bouchriha, Habib Bouchriha Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 1060 Tunis (Tunisia)Search for more papers by this authorRamzi Bourguiga, Ramzi Bourguiga Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 1060 Tunis (Tunisia)Search for more papers by this authorMohcen Hajlaoui, Mohcen Hajlaoui Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 1060 Tunis (Tunisia)Search for more papers by this author Gilles Horowitz, Gilles HorowitzSearch for more papers by this authorRiadh Hajlaoui, Riadh Hajlaoui Laboratoire des Matériaux Moléculaires, CNRS, 2 rue Henry-Dunant, F-94320 Thiais (France)Search for more papers by this authorHabib Bouchriha, Habib Bouchriha Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 1060 Tunis (Tunisia)Search for more papers by this authorRamzi Bourguiga, Ramzi Bourguiga Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 1060 Tunis (Tunisia)Search for more papers by this authorMohcen Hajlaoui, Mohcen Hajlaoui Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 1060 Tunis (Tunisia)Search for more papers by this author First published: 26 January 1999 https://doi.org/10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-WCitations: 207AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The performance of organic field-effect transistors (OFETs) has improved substantially in recent years. Their field-effect mobilities are now comparable to that of hydrogenated amorphous silicon thin-film transistors (TFTs). Both TFTs and OFETs operate in the accumulation regime and the authors here develop a comprehensive model for OFETs in this regime. They show that, in the case of a constant mobility, a threshold voltage cannot be defined. The threshold voltage observed in practice is attributed to a gate-voltage-dependent mobility. Citing Literature Volume10, Issue12August, 1998Pages 923-927 RelatedInformation