电阻率和电导率
退火(玻璃)
离子注入
材料科学
电阻式触摸屏
离子
分析化学(期刊)
复合材料
化学
电气工程
色谱法
工程类
有机化学
作者
Jennifer K. Hite,H. B. Dietrich,G. Kelner,L.B. Rowland,K. Doverspike,D. K. Wickenden
摘要
The effect of ion-implantation-induced damage on the resistivity of n-type GaN has been investigated. H, He, and N ions were studied. The resistivity as a function of temperature, implant concentration, and post-implant annealing temperature has been examined. Helium implantation produced material with an as-implanted resistivity of 1010 Ω-cm. He-implanted material remained highly resistive after an 800 °C furnace anneal. The damage associated with H implantation had a significant anneal stage at 250 °C and the details of the as-implanted resistivity were sample dependent. N implants had to be annealed at 400 °C to optimize the resulting resistivity but were then thermally stable to over 800 °C. The 300 °C resistivity of thermally stabilized He- and N- implanted layers was 104 Ω-cm, whereas for H-implanted layers the 300 °C resistivity was less than 10 Ω-cm.
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