Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H2O2) vapor treatment at 350 °C. We demonstrated that H2O and H2O2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 °C performed very poorly, whereas those annealed in air with H2O2 and H2O vapor at 350 °C exhibited significantly improved electrical performance. In particular, the H2O2-vapor-treated GIO TFTs had a mobility of 3.22 cm2 V−1 s−1. We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.