普遍性(动力系统)
MOSFET
缩放比例
绝缘体上的硅
纳米线
硅
频道(广播)
物理
材料科学
光电子学
电气工程
凝聚态物理
量子力学
晶体管
数学
工程类
电压
几何学
作者
Sarunya Bangsaruntip,G. M. Cohen,Amlan Majumdar,J.W. Sleight
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2010-07-22
卷期号:31 (9): 903-905
被引量:171
标识
DOI:10.1109/led.2010.2052231
摘要
Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of L EFF /λ, where L EFF is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that L EFF of undoped GAA NW MOSFETs can be scaled down by ~2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control.
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