量子隧道
正交晶系
晶体管
阈下摆动
缩放比例
材料科学
阈下传导
指数函数
凝聚态物理
物理
光电子学
MOSFET
电压
量子力学
几何学
数学
数学分析
衍射
作者
Wenhan Zhou,Hengze Qu,Shiying Guo,Bo Cai,Hongting Chen,Wei Xing Zheng,Haibo Zeng,Shengli Zhang
出处
期刊:Physical review applied
[American Physical Society]
日期:2022-06-28
卷期号:17 (6)
被引量:14
标识
DOI:10.1103/physrevapplied.17.064053
摘要
A band-to-band tunneling FET (TFET) with an atomical two-dimensional (2D) channel is a potential candidate for the next-generation electronic device in view of its steep subthreshold swing and low power consumption. However, how to establish a precise physical model between the band property of 2D channel materials and the device performance of 2D TFETs is the key to accelerate their practical applications. Herein, through high-throughput first-principles calculations, we study the tunneling transport properties of 44 representative 2D materials with four kinds of crystal system. Particularly, we propose a well-defined and striking exponential scaling law $(\mathrm{SS}=A{\mathrm{e}}^{B{m}_{r}}+C)$ between the subthreshold swings (SSs) and reduced effective masses $({m}_{r})$ of 10-nm TFETs. According to the exponential model, 2D orthorhombic and trigonal crystal TFETs with the steep SS hold the reduced effective masses of more than 0.1 and $0.2\phantom{\rule{0.25em}{0ex}}{m}_{0}$, which could inhibit tunneling leakage current. These insights provide guidance for material screening in the construction of post-Moore 2D low-power transistors.
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