Progress of Reliability and Failure Mechanisms for GaN‐Based Light‐Emitting Diodes

To achieve high reliable GaN‐based LEDs with a controllable lifetime is one of the key issues for applications. In this review, an overview of reliability studies for different GaN‐based LEDs, especially the research progress in our group based on our specially designed in situ multifunctional highly accelerated aging test system over the past few years, is presented. The contents not only cover high‐power GaN‐based LEDs, mid‐power GaN‐based LEDs, deep UV GaN‐based LEDs, micro‐LEDs, and phosphors under different operating conditions but also include the influence of point defects on the degradation, the correlation between luminous flux and color quality, and so on. Finally, prospects for reliability are discussed with the further development of the GaN‐based devices.