Tailoring neuroplasticity in flexible perovskite QDs-based optoelectronic synaptic transistors by dual modes modulation

材料科学 光电子学 对偶(语法数字) 神经可塑性 突触可塑性 晶体管 调制(音乐) 纳米技术 钙钛矿(结构) 神经科学 电压 电气工程 文学类 工程类 哲学 艺术 生物 受体 美学 化学 生物化学 化学工程
作者
Junyao Zhang,Tianli Sun,Sheng Zeng,Dandan Hao,Ben Yang,Shilei Dai,Dapeng Liu,Lize Xiong,Cairong Zhao,Jia Huang
出处
期刊:Nano Energy [Elsevier BV]
卷期号:95: 106987-106987 被引量:92
标识
DOI:10.1016/j.nanoen.2022.106987
摘要

For the achievement of robust neuromorphic computing with simple device integration and low energy consumption, the development of artificial synaptic devices incorporating multiple excitation modes has attracted wide interests. In this regard, a multi-functional and energy-efficient CsPbBr3 quantum dots-based optoelectronic synaptic transistor is designed capable of realizing required synaptic plasticity with both photonic and electric modulation modes in one device. Important synaptic behaviors, including excitatory post-synaptic current and paired-pulse facilitation, are simulated utilizing both photonic and electric stimulations. Furthermore, the transition of short-term plasticity (STP) to long-term plasticity (LTP) can also be implemented through either the adjustment of input photonic pulses or the co-modulation of photonic and electric operations. The excellent tunability between STP and LTP of the synaptic device further leads to the STP-based “Morse-code” optical decoding scheme and LTP-based simulation of visual object recognition. More significantly, the synergistic modulation of photonic and electric operations enables the implementation of logic functions. The multi-functional optoelectronic synaptic transistors are also mechanically flexible, and no distinct synaptic performance variation is observed even when the bending radius of the devices is down to 1 mm. This work suggests a new path for developing flexible and multifunctional neuromorphic electronics.
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