光电阴极
材料科学
石墨烯
光电流
光电子学
肖特基势垒
氧化物
纳米技术
量子力学
二极管
物理
电子
冶金
作者
Che‐Kuei Ku,Po‐Hsien Wu,Cheng‐Chu Chung,Chun‐Chi Chen,K. Y. Tsai,Hung‐Ming Chen,Yu‐Cheng Chang,Cheng‐Hao Chuang,Chuan‐Yu Wei,Cheng‐Yen Wen,Tzu‐Yao Lin,Hsuen‐Li Chen,Yen‐Shang Wang,Zhe‐Yu Lee,Jun‐Ru Chang,Chih‐Wei Luo,Di Yan Wang,Bing‐Joe Hwang,Chun‐Wei Chen
标识
DOI:10.1002/aenm.201901022
摘要
Abstract This work presents a novel photo‐electrochemical architecture based on the 3D pyramid‐like graphene/p‐Si Schottky junctions. Overcoming the conventional transfer technique by which only planar graphene/Si Schottky junctions are currently available, this work demonstrates the 3D pyramid‐like graphene/p‐Si Schottky junction photocathode, which greatly enhances light harvesting efficiency and exhibits promising photo‐electrochemical performance for hydrogen generation. The formation of 3D pyramid‐like graphene/p‐Si Schottky junctions exhibits enhanced electrochemical activity and promotes charge separation efficiency compared with the bare pyramid Si surface without graphene. The inherent chemical inertness of graphene significantly improves the operational stability of 3D graphene/p‐Si Schottky junction photo‐electrochemical cells. The 3D pyramid‐like graphene/p‐Si Schottky junction photocathode delivers an onset potential of 0.41 V and a saturated photocurrent density of −32.5 mA cm −2 at 0 V (vs RHE) with excellent stability comparable to values reported for textured or nanostructured p‐Si photocathodes coated with ultrathin oxide layers by the conventional atomic layer deposition technique. These results suggest that the formation of graphene/Si Schottky junctions with a 3D architecture is a promising approach to improve the performance and durability of Si‐based photo‐electrochemical systems for water splitting or solar‐to‐fuel conversion.
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