材料科学
单层
外延
范德瓦尔斯力
纳米技术
异质结
薄脆饼
原子单位
过渡金属
光电子学
图层(电子)
催化作用
物理
化学
有机化学
量子力学
生物化学
分子
作者
Soo Ho Choi,Hyung‐Jin Kim,Bumsub Song,Yong In Kim,Gyeongtak Han,Huong Thi Thanh Nguyen,Hayoung Ko,Stephen Boandoh,Ji Hoon Choi,Chang Seok Oh,Hyun Je Cho,Jeong Won Jin,Yo Seob Won,Byunghoon Lee,Seok Joon Yun,Bong Gyu Shin,Hu Young Jeong,Young‐Min Kim,Young‐Kyu Han,Young Hee Lee,Soo Min Kim,Ki Kang Kim
标识
DOI:10.1002/adma.202006601
摘要
Abstract Growth of 2D van der Waals layered single‐crystal (SC) films is highly desired not only to manifest the intrinsic physical and chemical properties of materials, but also to enable the development of unprecedented devices for industrial applications. While wafer‐scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) films has not been established to date. Here, the SC growth of TMdC monolayers on a centimeter scale via the atomic sawtooth gold surface as a universal growth template is reported. The atomic tooth‐gullet surface is constructed by the one‐step solidification of liquid gold, evidenced by transmission electron microscopy. The anisotropic adsorption energy of the TMdC cluster, confirmed by density‐functional calculations, prevails at the periodic atomic‐step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of the Miller indices. Growth using the atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS 2 , WSe 2 , MoS 2 , the MoSe 2 /WSe 2 heterostructure, and W 1− x Mo x S 2 alloys. This strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures on a wafer scale, to further facilitate the applications of TMdCs in post‐silicon technology.
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