掺杂剂
材料科学
晶界
兴奋剂
化学物理
杂质
密度泛函理论
透射电子显微镜
结晶学
扫描透射电子显微镜
纳米技术
计算化学
微观结构
光电子学
化学
冶金
有机化学
作者
Toshihiro Futazuka,Ryo Ishikawa,Naoya Shibata,Yuichi Ikuhara
标识
DOI:10.1038/s41467-022-32935-4
摘要
Abstract Impurity doping is a conventional but one of the most effective ways to control the functional properties of materials. In insulating materials, the dopant solubility limit is considerably low in general, and the dopants often segregate to grain boundaries (GBs) in polycrystals, which significantly alter their entire properties. However, detailed mechanisms on how dopant atoms form structures at GBs and change their properties remain a matter of conjecture. Here, we show GB structural transformation in α -Al 2 O 3 induced by co-segregation of Ca and Si aliovalent dopants using atomic-resolution scanning transmission electron microscopy combined with density functional theory calculations. To accommodate large-sized Ca ions at the GB core, the pristine GB atomic structure is transformed into a new GB structure with larger free volumes. Moreover, the Si and Ca dopants form a chemically ordered structure, and the charge compensation is achieved within the narrow GB core region rather than forming broader space charge layers. Our findings give an insight into GB engineering by utilizing aliovalent co-segregation.
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