Quasi‐1D Polymer Semiconductor–Diarylethene Blends: High Performance Optically Switchable Transistors

光致变色 材料科学 二芳基乙烯 聚合物 异构化 光子学 半导体 光电子学 晶体管 分子开关 有机半导体 分子 光开关 纳米技术 光化学 有机化学 化学 复合材料 催化作用 电压 物理 量子力学
作者
Yu‐Sheng Chen,Hanlin Wang,Hu Chen,Weimin Zhang,Shunqi Xu,Michael Pätzel,Chun Ma,Cang Wang,Iain McCulloch,Stefan Hecht,Paolo Samorı́
出处
期刊:Advanced Functional Materials [Wiley]
卷期号:33 (46) 被引量:11
标识
DOI:10.1002/adfm.202305494
摘要

Abstract Optically switchable field‐effect transistors (OSFETs) are non‐volatile photonic memory devices holding a great potential for applications in optical information storage and telecommunications. Solution processing of blends of photochromic molecules and π‐conjugated polymers is a low‐cost protocol to integrate simultaneously optical switching and charge transport functions in large‐area devices. However, the limited reversibility of the isomerization of photochromic molecules due to steric hindrance when embedded in ordered polymeric matrices represents a severe limitation and it obliges to incorporate as much as 20% in weight of the photochromic component, thereby drastically diluting the electronic function, limiting the device performance. Herein, a comparative study of the photoresponsivity of a suitably designed diarylethene molecule is reported when embedded in the matrix of six different polymer semiconductors displaying diverse charge transport properties. In particular, this study focuses on three semi‐crystalline polymers and three quasi‐1D polymers. It is found that 1% w/w of 1,2‐bis(5‐(3,5‐di‐tert‐butylphenyl)‐2‐methylthiophen‐3‐yl)cyclopent‐1‐ene in a blend with poly(indacenodithiophene‐co‐benzothiadiazole) is sufficient to fabricate OSFETs combining photo‐modulation efficiencies of 45.5%, mobilities >1 cm 2 V −1 s −1 , and photo‐recovered efficiencies of 98.1%. These findings demonstrate that quasi‐1D polymer semiconductors, because of their charge transport dominated by intra‐molecular processes, epitomize the molecular design principles required for the fabrication of high‐performance OSFETs.
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