Luminescence Temperature Quenching in Mn2+ Phosphors

荧光粉 材料科学 发光 猝灭(荧光) 光致发光 半最大全宽 分析化学(期刊) 光电子学 荧光 光学 物理 化学 色谱法
作者
Arnoldus J. van Bunningen,Atul D. Sontakke,Ruben van der Vliet,Vincent G. Spit,Andries Meijerink
出处
期刊:Advanced Optical Materials [Wiley]
卷期号:11 (6) 被引量:41
标识
DOI:10.1002/adom.202202794
摘要

Abstract Narrower band red and green emission in phosphor‐converted white light‐emitting diodes (wLEDs) can improve the efficacy and color gamut in lighting and display applications. A promising luminescent ion is Mn 2+ that can have both narrowband green (tetrahedral coordination) and red (octahedral coordination) emission. Unlike in earlier lighting applications of Mn 2+ phosphors, temperature quenching is important in wLEDs. Insight into the thermal quenching behavior of Mn 2+ luminescence is lacking. Here systematic research is reported for a variety of Mn 2+ ‐doped phosphors; a huge variation in the luminescence quenching temperature T 50 , ranging from 50 K for Mn 2+ in ZnTe to 1200 K in MgAl 2 O 4 , is revealed. The value T 50 shows a positive correlation with the bandgap of the host, but no correlation with the full width half maximum (FWHM) of the emission band, indicating that thermally activated photoionization, not thermal crossover, is the operative quenching mechanism. This is confirmed by thermally stimulated luminescence (TSL) measurements that show a rise in TSL signal following photoexcitation at temperatures around T 50 providing evidence that quenching is correlated with generation of free charge carriers. Based on these findings, as a design rule is obtained that for temperature‐stable Mn 2+ luminescence in (high power) LEDs a wide‐bandgap host material is required.
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