Quasi-One-Dimensional ZrS3 Nanoflakes for Broadband and Polarized Photodetection with High Tuning Flexibility

Two-dimensional (2D) layered materials with low crystal symmetries have exhibited unique anisotropic physical properties. Here, we report systematic studies on the photoresponse of field effect transistors (FETs) fabricated using quasi-one-dimensional ZrS3 nanoflakes. The as-fabricated phototransistors exhibit a broadband photocurrent response from ultraviolet to visible regions, where the responsivity and detectivity can be enhanced via additional gate voltages. Furthermore, benefiting from the strong in-plane anisotropy of ZrS3, we observe a gate-voltage and illumination wavelength-dependent polarized photocurrent response, while its sub-millisecond-time response speed is also polarization-dependent. Our results demonstrate the flexible tunability of photodetectors based on anisotropic layered semiconductors, which substantially broadens the application of low symmetry layered materials in polarization-sensitive optoelectronic devices.