Synthesis and electromagnetic transport of large-area 2D WTe2 thin film

Abstract Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer deposition and chemical vapor deposition technology, and the effects of different tellurization temperatures on the properties of tungsten telluride films were investigated. The growth rate, crystal structure and composition of the film samples were characterized and analyzed by using scanning electron microscope, Raman spectroscopy and X-ray photoelectron spectroscopy. The results showed that tungsten telluride thin films with good crystal orientation in (001) were obtained at telluride temperature of 550 °C. When the telluride temperature reached 570 °C, the tungsten telluride began to decompose and unsaturated magnetoresistance was found.