Jingnan Wang,Kaijie Lin,Yuliang Cao,Jianhua Ran,Xueqin Liu,Yihuang Chen,Yingzhe Li,Xiaoqin Hu
出处
期刊:CrystEngComm [The Royal Society of Chemistry] 日期:2024-01-01卷期号:26 (10): 1399-1409
标识
DOI:10.1039/d3ce01200j
摘要
In this work, oxygen vacancy (V O ) and hydrogen (H) impurity defects were introduced to control the chemical composition of α-Fe 2 O 3 . Our work verifies the relationship between the semiconductor electrode performance and its composition and provides effective guidance for further optimization.