光致发光
铟
量子产额
金属卤化物
材料科学
卤化物
激子
猝灭(荧光)
热稳定性
光电子学
化学物理
化学
凝聚态物理
物理
光学
无机化学
荧光
有机化学
作者
Shouxin Zhang,Peipei Dang,Hongzhou Lian,Kai Li,Long Tian,Wei Yang,Ziyong Cheng,Jun Lin
标识
DOI:10.1002/lpor.202300599
摘要
Abstract Zero‐dimensional (0D) lead‐free metal halides with efficient photoluminescence (PL) have wide application prospects in the optoelectronics field due to their unique structures and physicochemical properties. However, thermal quenching seriously hinders the practical applications of metal halide materials. Herein, this challenging effort is spearheaded to design novel lead‐free 0D indium‐based chloride K 3 InCl 6 :Sb 3+ single crystals with zero‐thermal quenching and a near‐unity PL quantum yield based on an effective strategy to suppress non‐radiative transitions. Experimental and computational studies indicate that the intense PL emission originates from self‐trapping excitons (STEs). The extremely low temperature of 7 K and time‐resolved spectra reveal the existence of two individual STEs emissions induced by the distinguished octahedrons in K 3 InCl 6 :Sb 3+ crystals. Meanwhile, the K 3 InCl 6 :Sb 3+ crystals can maintain PL stability without thermal quenching over a wide temperature range. Furthermore, the phosphor‐converted light‐emitting diodes can stably operate in the long term, benefitting from the significant structural and PL stability of Sb 3+ ‐doped 0D indium‐based chlorides. Therefore, this work not only presents new 0D metal halides with high efficiency and remarkable stability, but also provides insights into designing high‐performance optoelectronic materials.
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