Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation

Abstract Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for the development of next‐generation computing and sensing systems. Axon‐multisynapse systems enable the execution of sophisticated tasks, making them not only desirable but essential for future applications in this field. Anisotropic materials, which have different properties in different directions, are being used to create artificial synapses that can mimic the functions of biological axon‐multisynapse systems. However, the restricted variety and unadjustable conductive ratio limit their applications. Here, it is shown that anisotropic artificial synapses can be achieved on isotropic materials with externally localized doping via electron beam irradiation (EBI) and purposefully induced trap sites. By employing the synapses along different directions, artificial neural networks (ANNs) are constructed to accomplish variable neuromorphic tasks with optimized performance. The localized doping method expands the axon‐multisynapse device family, illustrating that this approach has tremendous potentials in next‐generation computing and sensing systems.