JFET公司
XNOR门
噪声裕度
逻辑门
逆变器
电子线路
晶体管
与非门
计算机科学
材料科学
范德瓦尔斯力
CMOS芯片
电气工程
电子工程
场效应晶体管
光电子学
电压
物理
工程类
量子力学
分子
作者
Ting-Hao Hsu,Hefei Liu,Han-Ting Liao,Hongming Zhang,Jian Zhao,Nishat Tasnim Hiramony,Sushmit Hossain,Zerui Liu,Jiacheng Ye,Li Wang,Wei Wu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-12-10
标识
DOI:10.1021/acsnano.4c13295
摘要
The emergence of reconfigurable field effect transistors has introduced a more efficient method for realizing reconfigurable circuits, significantly lowering hardware overhead and enhancing versatility. However, these devices often suffer from asymmetric transfer curves, impacting logic gate performance and reliability. This work investigates the use of the van der Waals junction field effect transistor (JFET) for reconfigurable circuit applications. We present a reconfigurable JFET realized through WSe2/MoS2 van der Waals integrated heterojunctions with an optimized polarity gate design that effectively addresses the issues of unmatched threshold voltages between n- and p- FETs while also anchoring threshold voltages and reducing subthreshold swing. A complementary reconfigurable JFET inverter with the proposed gate design was demonstrated, showcasing excellent switching characteristics, symmetric transfer characteristics, and reduced power consumption, achieving a noise margin of 96.3% and a high gain of 153.82. The study further demonstrates the construction of reconfigurable NOR/NAND and XOR/XNOR logic gates with symmetric profiles and sharp switching, underscoring the versatility and effectiveness of the proposed approach. These findings highlight the potential of WSe2/MoS2 JFETs in advancing low-power, high-performance, reconfigurable electronic circuits within the CMOS framework.
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