光电探测器
紫外线
半导体
光电子学
带隙
材料科学
宽禁带半导体
工程物理
物理
作者
Fa Cao,Ying Liu,Mei Liu,Zeyao Han,Xiaobao Xu,Quli Fan,Bin Sun
出处
期刊:Research
[AAAS00]
日期:2024-04-23
被引量:6
标识
DOI:10.34133/research.0385
摘要
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
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