绝缘栅双极晶体管
材料科学
电子工程
电压
可靠性(半导体)
计算机科学
宏
作者
Masaki Kazumi,Hitoshi Aoki,Yukiko Arai,Shunichiro Todoroki,Takuya Totsuka,Haruo Kobayashi
出处
期刊:Key Engineering Materials
日期:2016-07-01
卷期号:698: 109-117
标识
DOI:10.4028/www.scientific.net/kem.698.109
摘要
In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.
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