Electron holography characterization of the electrostatic potential of thin high-κ dielectric film embedded in gate stack

The electrostatic potential of the thin high-κ dielectric film and related interfaces embedded in the gate stack can be profiled in high spatial resolution in the wedge-shape sample. The retrieved potential uncovers the uneven distribution with a maximum 15.6 ± 0.7 V in HfLaON dielectric film. It implies the non-uniform material distribution in high-κ thin film and physical parameter of the film, such as permittivity, should not be considered as the constant.